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    skips para inas . Spatial distribution of In during the initial stages of growth of InAs on . Oct 1, 1996 . The spatial distribution of In in the surface layer has also been investigated by varying the substrate temperature for InAs deposition. More Details. Low noise high ...

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  • Length dependence of quantized conductance in ballistic ...

    A lengthdependent analysis of quantized conductance in splitgate constrictions fabried on InAs/AlSb quantumwell heterostructures is presented. Conductance steps with spacing within a few percent of 2(Formula presented)/h are observed in constrictions with channel lengths of μm.

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     · We demonstrated the effects of the number of InAs/GaAs QDSL layers on the HC generation and extraction processes in InAs/GaAs QDSL SCs with the excitation energy tuned below the GaAs band edge at 15 K. V oc originated from the HC extraction was enhanced from ~ to ~ V at the excitation energy of eV by increasing the number of QDSL layers owing to the increased .

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  • Evaluation of residual stress in InP and InAs (100 ...

     · According to Raman selection rule, the zinc blende InP(100) and InAs(100) are not allowed for any excitation of TO phonon vibration mode in backstering geometry, as shown in Fig. 3(a) and (b) which are the Raman spectra at the center of InP and InAs samples, respectively, we don't observe the presence of TO phonon mode peak, thus, we only analyze LO phonon mode peak features in Raman ...

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